Role of Defects on Electronic Properties in Various Mono Layer
Transition Metal Dichalcogenides
Abstract
The chalcogen vacancy defects in various transition metal
dichalcogenides (TMDCs) have been studied using density functional
theory (DFT) calculation. Results reveal that (i) the dissociation
energy value depends on both nature of chalcogen and transition metal,
(ii) the work function depends marginally on the single or double
vacancies, (iii) the defect transforms direct band gap to indirect band
gap materials (i.e. the pristine materials show KVKC transition whereas
defective materials show ΓVKC) and (iii) the d-orbital of the
transition metal plays a vital role in the formation of impurity band.