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Enhancing Efficiency in MoTe2-Based Solar Cells: The Impact of Sb2S3 Hole Transport Layer and Thickness Optimization
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  • Md. Arifur Rahman,
  • Md. Dulal Haque,
  • Md. Hasan Ali,
  • Abu Zafor Md. Touhidul Islam
Md. Arifur Rahman
University of Rajshahi

Corresponding Author:[email protected]

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Md. Dulal Haque
Hajee Mohammad Danesh Science and Technology University
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Md. Hasan Ali
Begum Rokeya University
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Abu Zafor Md. Touhidul Islam
University of Rajshahi
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In this study, SCAPS-1D simulator was used to investigate the performance of a solar cell structure based on Molybdenum Telluride (MoTe2) with Sb2S3 (Antimony Sulfide) Hole Transport Layer (HTL). The motivation behind choosing MoTe2 as an absorber layer for its higher optical absorption efficiency, cost-effectiveness, reliable and stable operation. The comparative study of this introduced (Al/FTO/CdS/MoTe2/Sb2S3/Pt) and baseline solar cell (Al/FTO/CdS/MoTe2/Pt) has been implemented. Various photovoltaic parameters like open-circuit voltage, short-circuit current, fill factor, and efficiency have been investigated varying absorber and HTL thickness, doping density, rare surface recombination velocity, defect density, series as well as shunt resistance and temperature. The proposed solar cell performance of η, Voc, Jsc, and FF was found to be 40.33%, 1.13 V, 40.78 mA/cm2, 87.63% optimizing absorber thickness value of 0.5 μm and doping concentration value of cm-3. The determined values of performance parameters Voc, Jsc, FF, and η are 0.95 V, 38.15 mA/cm2, 81.09% and 29.35%, respectively for baseline solar cell. The implantation of Sb2S3 layer contributes to improve the performances by diminishing carrier recombination losses. The present research results indicate the feasible way for obtaining a lower-cost, and higher-efficiency MoTe2-based SC with Sb2S3 HTL layer.